DWL 2000 GS / DWL 4000 GS

Heidelberg Instruments

SKU: DWL 2000 GS / DWL 4000 GS

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The industrial-level grayscale lithography tool

The DWL 2000 GS / DWL 4000 GS Laser Lithography systems are fast and flexible high-resolution pattern generators. They are optimized for industrial-level Grayscale Lithography and designed for high-throughput patterning of masks and wafers for integrated circuits, MEMS, micro-optic and microfluidic devices, sensors, holograms, and security features on banknotes and ID cards.

The Professional Grayscale Lithography Mode enables patterning of complex 2.5D structures in thick photoresist over large areas. With a minimum feature size of 500 nm, a write area of up to 400 x 400 mm² and optional automatic loading system, the DWL 2000 GS / DWL 4000 GS systems are particularly suitable for wafer-level micro-optics used for telecommunications, illumination, and industrial display manufacturing, as well as for device fabrication in life sciences.

Product Highlights Direct Write Lithography

Exposure Quality

CD uniformity 60 nm; edge roughness 40 nm; alignment accuracy 60 nm; 2nd layer alignment 250 nm; autofocus compensation 80 µm

Grayscale Lithography

1024 gray levels; dedicated GenISys BEAMER software for optimizing the exposure of complex geometries

Temperature-controlled Flow Box

Temperature stability ± 0.1°, ISO 4 environment

Exposure Speed

area of 200 x 200 mm² in grayscale mode in <60 minutes

Large Substrate Size

Up to 20 / 40 cm

5 Write Modes

Minimum feature sizes from 500 nm to 2 μm

Exposure Wavelength

Diode laser at 405 nm

Autofocus

Air-gauge or optical

Automation

Loading unit; additional substrate carrier station, pre-aligner, and substrate scanner

GenISys BEAMER

Conversion software packages with 3D proximity correction (3D-PEC) for grayscale exposures of complex shapes

Write mode	I	II	III	IV	V
Writing performance - Grayscale
Overlay [3σ, nm] (over 8” x 8”)			300
Pixel Grid Grayscale [nm]	100	200	250	500	1000
Write Speed DWL 2000 GS [mm²/minute]	12	50	75	270	870
Write Speed DWL 4000 GS [mm²/minute]	12	50	75	270	1000
Exposure Time DWL 2000 GS: For 200 mm x 200 mm [hours]	51	13.5	9	2.5	0.8
Exposure Time DWL 4000 GS: For 400 mm x 400 mm [hours]	223	54	36	10	3
Maximum Dose [mJ/cm2 ]	5600	1400	900	225	50
Writing performance - Binary
Minimum Feature Size [µm]	0.5	0.7	0.8	1	2
Minimum Lines and Spaces [µm]	0.7	0.9	1	1.5	3
Address Grid [nm]	5	10	12.5	25	50
Edge Roughness [3σ, nm]	40	50	60	80	110
CD Uniformity [3σ, nm]	60	70	80	130	180
Registration [3σ, nm]	200	200	200	200	200
Write Speed [mm²/minute] DWL 2000 GS	12	50	75	270	870
Write Speed [mm²/minute] DWL 4000 GS	12	50	75	270	1000

System features
Light source	Diode laser with 405 nm
Maximum substrate size	DWL 2000 GS: 9″ x 9″ / DWL 4000 GS: 17″ x 17″
Substrate thickness	0 to 12 mm
Maximum exposure area	DWL 2000 GS: 200 x 200 mm² / DWL 4000 GS: 400 x 400 mm²
Temperature controlled flow box	Temperature stability ± 0.1°, ISO 4 environment
Real-time autofocus	Optical autofocus or air-gauge autofocus
Autofocus compensation range	80 μm

System dimensions
Lithography unit (width × depth × height); weight	2350 mm × 1650 mm × 2100 mm; 3000 kg
Electronic rack (width × depth × height); weight	800 mm × 600 mm × 1800 mm; 180 kg

Installation requirements
Electrical	400 VAC ± 5 %, 50/60 Hz, 16 A
Compressed air	6 - 10 bar
Cleanroom	ISO 6 or better recommended

fact-sheet-DWL-2000-GS.pdf