PECVD Systems

Plasma Enhanced Chemical Vapour Deposition (PECVD)

PECVD is a well established technique for deposition of a wide variety of films. Many types of device require PECVD to create high quality passivation or high density masks. Oxford Instruments have a variety of PECVD systems to suit your requirements.

Highlights

  • Top electrode RF driven (MHz and/or kHz); no RF bias on lower (substrate) electrode 
  • Substrate sits directly on heated electrode 
  • Gas injected into process chamber via “showerhead” gas inlet in the top electrode 
  • Film stress can be controlled by high/low frequency mixing techniques 
  • Lower temperature processes compared to conventional CVD

Features & Benefits

  • SiOx, SiNx and SiOxNy deposition for a wide range of applications including photonics structures, passivation, hard mask, etc.
  • Amorphous silicon (a-Si:H)
  • TEOS SiO2 with conformal step coverage, or void-free good step coverage
  • SiC
  • Diamond-like carbon (DLC)Offers a wide range of material deposition, including:
  • Plasma cleaning process with end-point control removes or reduces need for physical/chemical chamber cleaning 
  • Control over film stoichiometry via process conditions

PECVD Systems

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Our ion beam deposition products are chosen for their ability to produce deposited films with high quality, dense...
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The PlasmaPro 80 is a compact, small footprint system offering versatile etch and deposition solutions with convenient open...
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The PlasmaPro 80 is a compact, small footprint system offering versatile etch and deposition solutions with convenient open...
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The PlasmaPro 800 offers a flexible solution for reactive ion etching (RIE) processes on large wafer batches and...
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The PECVD process modules are specifically designed to produce excellent uniformity and high rate films, with control of...
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