Atomic Layer Etching (ALE) Systems

Atomic Layer Etching (ALE) is an advanced etch technique that allows for excellent depth control on shallow features. As device feature size reduces further and further ALE is required to achieve the accuracy required for peak performance.

Highlights

  • Ultra low damage
  • High selectivity
  • Ultra accurate depth control
  • Ultra low power operation
  • Ability to etch in ALE or normal etch mode

Features & Benefits

  • Etch rates 2 to 7Å/cycle
  • Demonstrated results in a-Si, Si, SiO2, MoS2, GaN, AlGaN layer etching
  • Fast recipe control down to 10ms
  • ALD-style gas dose delivery using “ALD valves” with 10ms open-close response

Atomic Layer Etching (ALE) Cycle)

Atomic Layer Etching (ALE) Cycle

Atomic Layer Etching (ALE) Systems

$POR
The PlasmaPro 100 range of etch and deposition tools can be fitted with a variety of substrate electrodes,...
$POR
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