Atomic Layer Etching (ALE) Systems

1 product

    Atomic Layer Etching (ALE) is an advanced etch technique that allows for excellent depth control on shallow features. As device feature size reduces further and further ALE is required to achieve the accuracy required for peak performance.


    • Ultra low damage
    • High selectivity
    • Ultra accurate depth control
    • Ultra low power operation
    • Ability to etch in ALE or normal etch mode

    Features & Benefits

    • Etch rates 2 to 7Å/cycle
    • Demonstrated results in a-Si, Si, SiO2, MoS2, GaN, AlGaN layer etching
    • Fast recipe control down to 10ms
    • ALD-style gas dose delivery using “ALD valves” with 10ms open-close response

    Atomic Layer Etching (ALE) Cycle)

    Atomic Layer Etching (ALE) Cycle

    1 product
    PlasmaPro 100 ALE - Nano Vacuum
    PlasmaPro 100 Atomic Layer Etching System
    Oxford Instruments Plasma

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