MLA300 Maskless Aligner for Volume Production
OPTIMIZED FOR INDUSTRIAL MANUFACTURING, ENSURING HIGH THROUGHPUT AND SEAMLESS PRODUCTION LINE INTEGRATION
The Maskless Aligner MLA300 provides high throughput, simplified workflow and integration with manufacturing execution systems (MES). This tool is used for the production of sensors and sensor ICs, MEMS and microfluidic devices. Other applications include discrete electronic components, analog and digital ICs, ASICs, power electronics, OLED displays and advanced packaging.
The MLA300 achieves the highest optical quality and precision. The standard exposure module achieves min. feature size of 1.5 µm. Writing modes for higher throughput at 4 µm resolution and higher resolution at 1 µm are coming soon. MLA300 features full automation with customizable loading options, software designed for production environments and a patented substrate tracking technology.
The MLA300 reduces production costs and effort by overcoming the requirement for mask procurement, verification and management. Operating costs benefit from a long-lifetime exposure laser (est. 10 years at 24/7 production) and fewer consumables. Modularity enables fast maintenance, replacement or repair. Real-time autofocus compensates substrate warp or corrugations for flawless patterning. Maskless lithography allows per-die pattern corrections and serialization for full tracing of product characteristics, such as sensor calibration.
Direct-write Lithography
Flexibility
Time-saving
Exposure Quality
Dynamic Autofocus
Exposure Speed
Full Facility Integration
User-friendly
Low Cost of Ownership
Automated Loading Module
Exposure Modules
Manufacturing Execution System (MES)
Backside Alignment
Exposure Wavelengths
Service Contracts
| Writing performance | |
|---|---|
| Minimum lines and spaces [µm] | 2 |
| Minimum feature size [µm] | 1.5 |
| CD uniformity [3σ, nm] | 200 |
| Edge roughness [3σ, nm] | 80 |
| Stitching [3σ, nm | 120 |
| 2nd layer alignment [3σ, nmσ] | 500 |
| Backside alignment [3σ, nm] | 1000 |
| Exposure time per module ( 100 x 100 mm² at 50 mJ/cm² and 405 nm laser wavelength) | 2.6 min |
| Maximum write speed with one module at 405 nm laser wavelength | 5000 mm²/min |
| System features | |
|---|---|
| Light source | Laser wavelength: 375 nm and 405 nm High power diode laser with long life-time |
| Maximum substrate size | 300 x 300 mm² |
| Maximum exposure area | 300 x 300 mm² |
| Substrate thickness | 0.1 - 10 mm |
| Modular environmental chamber | Temperature stability ± 0.1°C |
| Real-time autofocus | Optical and/or pneumatic autofocus |
| Autofocus dynamic range | Up to 150 µm |
| Alignment | Advanced alignment; backside alignment optional |
| Automation | Automatic wafer handling and pre-alignment |
| System dimensions (excluding loader) | |
| Height × width × depth | 1980 mm x 1200 mm x 2310 mm |
| Weight | 2600 kg |
| Installation requirements | |
| Electrical | 400 VAC, 50/60 Hz, 16 A |
Please note
Specifications depend on individual process conditions and may vary according to equipment configuration. Write speed depends on pixel size and write mode. Design and specifications are subject to change without prior notice.
