The PlasmaPro 100 RIE modules deliver anisotropic dry etching for an extensive range of processes.

• Compatible with all wafer sizes up to 200mm
• Rapid change between wafer sizes
• Low cost of ownership and ease of serviceability

• Excellent uniformity, high throughput and high precision processes

• In-situ chamber cleaning and end-pointing

• Wide temperature range electrode, -150°C to 400°C

System Features:

• Delivers reactive species to the substrate, with a uniform high conductance path through the chamber
  Allows a high gas flow to be used while maintaining low pressure
• Wide temperature range electrode (-150°C to +400°C) 
  which can be cooled by liquid nitrogen, a fluid re-circulating chiller or resistively heated - An optional blow out and fluid exchange unit can automate the process of switching modes
• A fluid controlled electrode fed by a re-circulating chiller unit
  Excellent substrate temperature control
• High pumping capacity - gives wide process pressure window
• Wafer clamping with He backside cooling
  Optimum wafer temperature control

Applications:

• III-V etch processes
• Solid State Lasers InP etch
• VCSEL GaAs/AlGaAs etch
• RF device low damage GaN etch
• Diamond Like Carbon (DLC)deposition
• SiO₂ and quartz etch
• Failure analysis dry etch de-processing ranging from packaged chip and die etch through to full 200mm wafer etch

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