The PlasmaPro 100 RIE modules deliver anisotropic dry etching for an extensive range of processes.
- Compatible with all wafer sizes up to 200mm
- Rapid change between wafer sizes
- Low cost of ownership and ease of serviceability
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Excellent uniformity, high throughput and high precision processes
- In-situ chamber cleaning and end-pointing
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Wide temperature range electrode, -150°C to 400°C
System Features:
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Delivers reactive species to the substrate, with a uniform high conductance path through the chamber
Allows a high gas flow to be used while maintaining low pressure -
Wide temperature range electrode (-150°C to +400°C)
which can be cooled by liquid nitrogen, a fluid re-circulating chiller or resistively heated - An optional blow out and fluid exchange unit can automate the process of switching modes -
A fluid controlled electrode fed by a re-circulating chiller unit
Excellent substrate temperature control - High pumping capacity - gives wide process pressure window
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Wafer clamping with He backside cooling
Optimum wafer temperature control
Applications:
- III-V etch processes
- Solid State Lasers InP etch
- VCSEL GaAs/AlGaAs etch
- RF device low damage GaN etch
- Diamond Like Carbon (DLC)deposition
- SiO2 and quartz etch
- Failure analysis dry etch de-processing ranging from packaged chip and die etch through to full 200mm wafer etch
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