PlasmaPro 800 PECVD

The PlasmaPro 800 offers a flexible solution for reactive ion etching (RIE) processes on large wafer batches and 300mm wafers, in a compact footprint, open-loading system. The large wafer platen allows for production scale batch processing and 300mm wafer handling.

• High performance processes
• Excellent substrate temperature control
• Precise process control
• Proven processes for 300mm single wafer Failure Analysis
• High performance processes
• Excellent substrate temperature control
• Precise process control

System Features:

Allowing maximum process flexibility for compound semiconductor, optoelectronics, and photonics applications, the PlasmaPro 800 provides:

Large electrode - Low Cost of Ownership

Etch end point detection - Reliability and serviceability

Endpoint detection by laser interferometry and/or optical emission spectroscopy - Can be fitted to enhance etch control

Options of a 4-, 8- or 12-line gas pod - Provides flexibility in processes and process gases, and may be remotely sited in the service area, away from the main process tool

Close-coupled turbo pump - High pumping speed and excellent base pressure

Datalogging - Traceability and history of chamber and process conditions

Fluid-cooled and/or electrically-heated electrodes - Excellent electrode temperature control and stability

Applications:

• Failure analysis dry etch de-processing using our specially configured failure analysis tools, with RIE and dual-mode
• RIE/PE processes ranging from packaged chip and die etch through to full 300mm wafer etch
• High quality PECVD of SiNx and SiO2 for photonics, dielectric layer passivation and many other applications
• SiO2, SiNx and quartz etch
• Metal and polyimide etch
• Passivation deposition for high brightness LED production
• III-V etch processes

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