Maximise Performance of GaN Power Devices

Join the Webinar!

By Dr Aileen O’Mahony

Atomic Scale Processing Product Manager

Oxford Instruments Plasma Technology

GaN offers significant possibilities for efficiency improvements, higher operating temperatures which will lead to smaller, lighter and more cost-efficient power semiconductor components.

In her webinar, Dr Aileen O'Mahony will focus on atomic layer processing solutions for next-generation GaN HEMTs for power electronics and RF applications. She will share the newest developments on atomic layer deposition for low damage, high-quality dielectrics and passivation layers, and update on our technology solutions for accurate, controlled atomic layer etching for pGaN HEMTs and GaN MISHEMTs.

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