The ICP CVD process module is designed to produce high quality films from room temperature to 400°C with high density plasmas at low deposition pressures and temperatures.
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Excellent uniformity, high throughput and high precision processes
- High quality films
- Wide temperature range electrode
- Compatible with all wafer sizes up to 200mm
- Rapid change between wafer sizes
- Low cost of ownership and ease of serviceability
- Compact footprint, flexible layout
- Resistive heated electrodes with capability up to 400°C or 1200°C
- In-situ chamber cleaning and end-pointing
Features & Benefits
- Excellent quality low damage films at reduced temperatures.
- Typical materials deposited include SiO2, Si3N4 and SiON, Si and SiC at substrate temperatures as low as 5ºC
- ICP source sizes of 65mm, 180mm, 300mm delivering process uniformity
up to 200mm wafers - Electrodes available for temperature ranges from 5ºC to 400ºC
- Patented ICPCVD gas distribution technology
- In situ chamber cleaning with endpointing
Upgrades/Accessories
Dry pump N2 standby mode - Saves energy and nitrogen
Gas pod - incorporate extra gas lines and allow greater flexibility
Logviewer software - datalogging software allows realtime graphing and post run analysis
Optical end point detectors - an important tool for achieving optimal process results
Soft pump - allows the slow pumping down of a vacuum chamber
Turbomolecular vacuum pump - offers superior pumping speeds and higher throughput
X20 Control System - delivers a future proof, flexible and reliable tool with increased system ‘intellect’
Advanced Energy Paramount generator - Offering increased reliability and greater plasma stability
Automatic pressure control - This controller ensures very fast and accurate pressure control
Dual CM gauge switching - provides the ability to utilise two differing ranges of capacitance manometer via a single pressure control valve
LN2 autochangeover unit - enables table cooling fluid to be automatically switched between Liquid Nitrogen (LN2) and Chiller Fluid
TEOS liquid level sensing - level sensing is achieved using ultra sonic level sensors fitted to the TEOS canister
Wide temperature range electrode - significant design improvements to increase process performance