Enviro METROS FAB

Enviro METROS FAB

SPECS
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The novel EnviroMETROS series provides the perfect routine analysis tools for any sample with a special focus on multilayer thin films and their surfaces by combining small to large sample capabilities or wafer handling with a variable information depth photoelectron spectrometer.

EnviroMETROS is a unique metrology platform for the chemical analysis of ultrathin films and 2D materials that allows a detailed characterization of stoichiometries‚ composition and depth distribution of elements. In combination with optical and other analytical techniques it enables depth dependent composition analysis of unsurpassed precision‚ reliability and repeatability.

KEY FEATURES

  • Metrology with ultimate stability, reliability and repeatability;
  • Precise chemical and dimensional quantification
  • Short acquisition times (high sensitivites and throughput)
  • Non-destructive depth profiling using different photon energies in combination with angle resolved XPS (ARXPS)
  • Flexible analysis area (100 µm to 1 mm)
  • Integration of supplementary optical metrology (IRRAS and Raman)
  • Electronic structure analysis by combined UPS and IPES
  • Identification of energy loss mechanisms by REELS
  • Option to operate the system in UHV or NAP environment
  • Fully Software Controlled

SPECIFICATIONS

Configuration
System
  • Automated surface metrology system for (NAP-)XPS, (NAP-)HAXPES, LEISS, Arn+-Sputter
    depth profiling, REELS, (NAP-)UPS,
    IPES, SEM/SAM, Raman and IRRAS
  • Clean room, CE, UL and SEMI compliant
EnviroMETROS FAB 8 and FAB 12 System
  • Fully automated handling of 200 mm (8″)
    or 300 mm (12″) wafers
  • Coupling port to any 8″ or 12″ wafer robot chamber
    (smaller sizes on request)
  • Wafer robot integrated into the system (optional)
Pumping System
  • Turbomolecular pumps
  • Oil-free backing pumps
Electron spectrometer
  • From UHV (< 5 × 10-10 mbar) to NAP (50 mbar)
Electron spectrometer
  • Hemispherical Electron Analyzer (150 mm) with wide angle lens (+/- 30°)
  • AD-CMOS Detector (< 1200 energy channels and < 12 angle channels)
X-Ray Source
  • Small spot crystal monochromator
  • Spot sizes: < 100 μm to > 1 mm
  • Switchable X-ray energies (Al Kα, Ag Lα, Cr Kα)
Charge neutralization
  • Dual beam charge neutralization (UHV)
  • Environmental charge compensation (NAP)
SEM/SAM
  • Imaging with 1 μm lateral resolution
Sputter depth profiling
  • Monoatomic (0.2 – 5 keV)
  • Ar-Cluster (up to 10 keV, optional)
LEISS
  • He+ ion scattering spectroscopy (0.2 – 5 keV)
(NAP-)UPS
  • Small spot UV discharge source
IPES
  • Low energy BIS (5 – 15 eV)
REELS
  • Electron energies (0.1 – 5 keV)
Raman/IRRAS
  • Integrated in measurement position
Gas dosing system
  • Automatic inlet for 3 gases (optional)
Automation
  • Full automation of vacuum system, sample transfer,
    data analysis, reporting
Software
  • Keystone M for vacuum control, sample transfer,
    sample analysis and reporting
  • ISQAR and ITFAP packages integrated for
    data evaluation and depth profiling
Wafer size
  • 200 mm or 300 mm
Samples
  • Wafers or wafer size adapter plates for wafer coupons
Electrical contacts
  • Wafer potential contact
Sample stage
  • Fully motorized, non-magnetic, UHV/NAPcompatible and computer controlled three axis wafer stage for full 200 mm / 300 mm lateral motion and 10 mm vertical motion

MADE FOR THESE METHODS

 


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