CVD/PECVD Tools 1D/2D Nanomaterials

CVD is a well established technique for deposition of a wide variety of films with different compositions and thicknesses down to a single layer of atoms.

Highlights

• Substrate sits directly on electrode which can be heated up to 1200˚C
• Gas injected into process chamber via “showerhead” gas inlet in the top electrode 
• Solid/liquid precursor delivery system for novel processes such as 2D materials MOCVD, ZnO nanowire CVD etc.
• Automatic load lock to transfer sample directly on to a hot table and save time on heating and cooling.
• Plasma enhancement options for lower temperature deposition or plasma assisted conversion or functionalization as well as chamber cleaning.
• Wide range of processes possible in the same chamber

Features & Benefits

• Up to 1200˚C table temperature
• Direct and remote plasma enhancement options
• Operating pressures up to 5 Torr (higher possible)
• Dry plasma cleaning process with end-point control removes or reduces need for physical/chemical chamber cleaning 
• Multiple heated/cooled liquid/solid precursors delivery system in addition to 12 gas delivery lines.
• Offers a wide range of material deposition, including:
• Si based PECVD/ICP CVD processes and high temperature CVD processes in the same chamber
• 1D materials growth such as Carbon nanotubes, ZnO nanowires and Si Nanowires
• 2D materials growth  such as Graphene, hBN, MoS₂/WS₂ and other transition metal dichalcogenides (TMDCs)