nanoCVD-WPG For Graphene (Plasma Enhanced)

Moorfield Nanotech SKU: nanoCVD-WPG
nanoCVD-WPG For Graphene (Plasma Enhanced) - Nano Vacuum

nanoCVD-WPG For Graphene (Plasma Enhanced)

Moorfield Nanotech SKU: nanoCVD-WPG
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Compact and wafer-scale plasma-enhanced chemical vapour deposition (CVD) system for rapid synthesis of high-quality graphene.

Key features:

  • Compact, benchtop design
  • Wafer-scale synthesis: 3” or 4”
  • 150 W/13.56 MHz RF power supply
  • Multiple in-chamber plasma electrodes
  • 1100 °C maximum platen temperature
  • Cold-walled technology
  • Fully-automatic control of critical conditions
  • User-friendly, touchscreen interface
  • Define/save multiple growth recipes
  • PC connection for data-logging
  • Equipped for easy servicing
  • Comprehensive safety features
  • Cleanroom compatible
  • Implements proven nanoCVD technology


Developed in collaboration with academic partners, nanoCVD technology is proven for the rapid throughput production of high-quality graphene for R&D applications via the well-established chemical vapour deposition (CVD) route that is considered most promising for future commercialisation of graphene-based technologies. Model nanoCVD-WGP is the result of the scaling of this technology to the wafer scale (3” or 4”), together with the addition of plasma-enhanced capability in a cold-walled chamber. While this represents a significant leap in the capabilities of the nanoCVD range, intelligent design means the compact nature of the units has been maintained for efficient location and integration.

Growth schemes:

Compatible with numerous CVD methods:

Substrates: Cu, Ni, etc. (films or foils)
Feedstocks: CH4, C2H4, solids (PMMA), etc.
Process gases: H2, Ar, N2, etc.


Process chamber: Cold-walled, stainless steel with heat shielding. Pumping system: Turbomolecular pumping system; <5×10-7 mbar base pressure. Substrate stage: Up to 4" diameter. Up to 1100 °C with 1 °C control resolution. System operation: Touchscreen HMI and PC software. Manual or automatic control. Process gases: MFC controlled. Ar, CH4 and H2 as standard. Pressure control: Automatic. Plasma generation: 150 W/13.56 MHz RF power supply. Generation at substrate stage or remote electrodes. Safety features: Coolant and vacuum interlocks. Gas dilution modules.


Pure research, product development and education in:

  • Graphene & 2D materials
  • Electrodes for photovoltaics
  • Touchscreen displays
  • High-performance electronics
  • Biological, chemical and mechanical sensors
  • Electrical energy storage

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